Monday, May 4, 2015
Carrier Density Enhancement Factor for Biased NP Junctions
When Chris and I were working on homework set 5, we noticed a discrepancy between the enhancement factor that we both agreed upon and that which was discussed online and in class. It was established online that the enhancement factor was about 54, or e^4 for the problem in which the applied voltage was -.1v. However, we believe that the exponent here is off by a factor of 2, and instead should be e^8. You can see our work for this in the picture provided, but note that the sign convention is that which Zack provided in the comments on HW 5.
Subscribe to:
Post Comments (Atom)
Why did you plug in eVa into the delta EF part of the conduction energy formula? I think you may have tied together unrelated concepts. The change in Fermi energy part you guys are getting stems from the conduction energy formula, but the conduction energy will be the same for both equations, regardless of an applied current. The only thing that's different between the two is your EF (not change in EF), which increases by an amount -eVa, so the answer is e^((-eVa)/KT).
ReplyDelete